Information for Paper ID 1700
Paper Information:
Paper Title: An RF Memristor Model and Memristive Single-Pole Double-Throw Switches 
Student Contest: Yes 
Affiliation Type: Academia 
Keywords: memristors, modeling, RF, SPDT 
Abstract: In this paper, we present a scalable physics-based model, which accurately predicts the steady-state high-frequency behavior of memristive RF switches. This model is, to the best of our knowledge, the first lumped RF memristor model that includes device parasitics obtained from physical measurements reported in the literature. Furthermore, we propose two topologies (series and shunt) for non-volatile single-voltage-controlled Single-Pole Double-Throw switches using the proposed lumped RF memristor model. These topologies exhibit low insertion loss and high isolation. Adding non-volatility to RF switches will result in reduction of power consumption. 
Track ID: 5.7 
Track Name: Emerging Memory and Memristor Technology and Applications 
Secondary Track ID: 1.3 
Secondary Track Name: Rf Circuits 
Final Decision: Accept as Lecture 
Session Name: Memristor-Based Technology & Circuits I (Lecture) 
Theme Information:
Selected Theme(s):
None